IXTY01N100D
RoHS 
RoHS compliant
RoHS compliantPackage TO-252-3, DPak (2 Leads + Tab), SC-63
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 1000V 0.1A TO-252AA
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Buying Options
Total Price: USD $3.37
Unit Price: USD $3.3704
≥1 USD $3.3704
≥10 USD $2.667782
≥100 USD $2.28668
≥500 USD $2.03258
≥1000 USD $1.740394
≥3000 USD $1.638771
Inventory: 5810
Minimum: 1
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Technical Details
Compliance
Lead Free Lead Free
RoHS Status ROHS3 Compliant
Radiation Hardening No
Technical
FET Feature Depletion Mode
Pulsed Drain Current-Max (IDM) 0.4A
Drain to Source Breakdown Voltage 1kV
Gate to Source Voltage (Vgs) 20V
JEDEC-95 Code TO-252AA
Continuous Drain Current (ID) 100mA
Turn-Off Delay Time 30 ns
Fall Time (Typ) 6 ns
Vgs (Max) ±20V
Drain to Source Voltage (Vdss) 1000V
Rise Time 6ns
Current - Continuous Drain (Id) @ 25°C 100mA Tc
Input Capacitance (Ciss) (Max) @ Vds 120pF @ 25V
Rds On (Max) @ Id, Vgs 110 Ω @ 50mA, 0V
Transistor Application SWITCHING
FET Type N-Channel
Case Connection DRAIN
Power Dissipation 1.1W
Element Configuration Single
Power Dissipation-Max 1.1W Ta 25W Tc
Number of Elements 1
JESD-30 Code R-PSSO-G2
Pin Count 4
Terminal Form GULL WING
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Terminal Finish Pure Tin (Sn)
Resistance 110Ohm
ECCN Code EAR99
Number of Terminations 2
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Active
Pbfree Code yes
Published 2006
Packaging Tube
Operating Temperature -55°C~150°C TJ
Physical
Transistor Element Material SILICON
Number of Pins 3
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type Surface Mount
Mount Surface Mount
Supply Chain
Factory Lead Time 24 Weeks
Alternative Model
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