Pulsed Drain Current-Max (IDM) 0.4A
Drain to Source Breakdown Voltage 1kV
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 100mA
Turn-Off Delay Time 28 ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Drain to Source Voltage (Vdss) 1000V
Gate Charge (Qg) (Max) @ Vgs 6.9nC @ 10V
Current - Continuous Drain (Id) @ 25°C 100mA Tc
Input Capacitance (Ciss) (Max) @ Vds 54pF @ 25V
Vgs(th) (Max) @ Id 4.5V @ 25μA
Rds On (Max) @ Id, Vgs 80 Ω @ 100mA, 10V
Transistor Application SWITCHING
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 25W Tc
Technology MOSFET (Metal Oxide)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature -55°C~150°C TJ