IXTX210P10T
RoHS 
RoHS compliant
RoHS compliantPackage TO-247-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET P-CH 100V 210A PLUS247
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Buying Options
Total Price: USD $26.49
Unit Price: USD $26.488
≥1 USD $26.488
≥10 USD $21.95688
≥100 USD $20.58459
Inventory: 304
Minimum: 1
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Technical Details
Compliance
RoHS Status ROHS3 Compliant
Technical
Avalanche Energy Rating (Eas) 3000 mJ
DS Breakdown Voltage-Min 100V
Pulsed Drain Current-Max (IDM) 800A
Drain-source On Resistance-Max 0.0075Ohm
Continuous Drain Current (ID) 210A
Vgs (Max) ±15V
Drive Voltage (Max Rds On,Min Rds On) 10V
Drain to Source Voltage (Vdss) 100V
Gate Charge (Qg) (Max) @ Vgs 740nC @ 10V
Current - Continuous Drain (Id) @ 25°C 210A Tc
Input Capacitance (Ciss) (Max) @ Vds 69500pF @ 25V
Vgs(th) (Max) @ Id 4.5V @ 250μA
Rds On (Max) @ Id, Vgs 7.5m Ω @ 105A, 10V
Transistor Application SWITCHING
FET Type P-Channel
Case Connection DRAIN
Operating Mode ENHANCEMENT MODE
Power Dissipation-Max 1040W Tc
Configuration SINGLE WITH BUILT-IN DIODE
Number of Elements 1
JESD-30 Code R-PSIP-T3
Pin Count 3
Terminal Position SINGLE
Technology MOSFET (Metal Oxide)
Subcategory Other Transistors
Additional Feature AVALANCHE RATED
ECCN Code EAR99
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Active
Series TrenchP?
Published 2012
Packaging Tube
Operating Temperature -55°C~150°C TJ
Physical
Transistor Element Material SILICON
Package / Case TO-247-3
Mounting Type Through Hole
Mount Through Hole
Supply Chain
Factory Lead Time 28 Weeks
Alternative Model
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