Avalanche Energy Rating (Eas) 2500 mJ
DS Breakdown Voltage-Min 1500V
Pulsed Drain Current-Max (IDM) 50A
Drain-source On Resistance-Max 1Ohm
Continuous Drain Current (ID) 20A
Drive Voltage (Max Rds On,Min Rds On) 10V
Drain to Source Voltage (Vdss) 1500V
Gate Charge (Qg) (Max) @ Vgs 215nC @ 10V
Current - Continuous Drain (Id) @ 25°C 20A Tc
Input Capacitance (Ciss) (Max) @ Vds 7800pF @ 25V
Vgs(th) (Max) @ Id 4.5V @ 1mA
Rds On (Max) @ Id, Vgs 1 Ω @ 10A, 10V
Transistor Application SWITCHING
Operating Mode ENHANCEMENT MODE
Power Dissipation-Max 1250W Tc
Configuration SINGLE WITH BUILT-IN DIODE
Reach Compliance Code unknown
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Additional Feature AVALANCHE RATED
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature -55°C~150°C TJ