Avalanche Energy Rating (Eas) 5000 mJ
Pulsed Drain Current-Max (IDM) 500A
Continuous Drain Current (ID) 200A
Drive Voltage (Max Rds On,Min Rds On) 10V
Drain to Source Voltage (Vdss) 100V
Gate Charge (Qg) (Max) @ Vgs 540nC @ 10V
Current - Continuous Drain (Id) @ 25°C 200A Tc
Input Capacitance (Ciss) (Max) @ Vds 23000pF @ 25V
Vgs(th) (Max) @ Id 4.5V @ 3mA
Rds On (Max) @ Id, Vgs 11m Ω @ 100A, 10V
Transistor Application SWITCHING
Operating Mode ENHANCEMENT MODE
Power Dissipation-Max 1040W Tc
Configuration SINGLE WITH BUILT-IN DIODE
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Additional Feature AVALANCHE RATED
Terminal Finish TIN SILVER COPPER
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature -55°C~150°C TJ