IXTX170P10P
RoHS 
RoHS compliant
RoHS compliantPackage TO-247-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET P-CH 100V 170A PLUS247
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Buying Options
Total Price: USD $16.83
Unit Price: USD $16.833883
≥1 USD $16.833883
≥10 USD $15.881021
≥100 USD $14.982098
≥500 USD $14.134055
≥1000 USD $13.334013
Inventory: 1108
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 28 Weeks
Physical
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 247
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2009
Series PolarP?
JESD-609 Code e1
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish TIN SILVER COPPER
Additional Feature AVALANCHE RATED
Subcategory Other Transistors
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code unknown
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
JESD-30 Code R-PSIP-T3
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 890W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 890W
Case Connection DRAIN
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 12m Ω @ 500mA, 10V
Vgs(th) (Max) @ Id 4V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 12600pF @ 25V
Current - Continuous Drain (Id) @ 25°C 170A Tc
Gate Charge (Qg) (Max) @ Vgs 240nC @ 10V
Drain to Source Voltage (Vdss) 100V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Continuous Drain Current (ID) 170A
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.012Ohm
Drain to Source Breakdown Voltage -100V
Pulsed Drain Current-Max (IDM) 510A
Avalanche Energy Rating (Eas) 3500 mJ
Compliance
RoHS Status ROHS3 Compliant
Alternative Model
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