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IXTV36N50P

IXYS
RoHS
/
Package TO-220-3, Short Tab
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description Trans MOSFET N-CH 500V 36A 3-Pin(3+Tab) PLUS 220
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Technical Details

Compliance

Lead Free Lead Free
RoHS Status RoHS Compliant

Technical

Avalanche Energy Rating (Eas) 1500 mJ
Pulsed Drain Current-Max (IDM) 108A
Drain to Source Breakdown Voltage 500V
Drain-source On Resistance-Max 0.17Ohm
Gate to Source Voltage (Vgs) 30V
Continuous Drain Current (ID) 36A
Turn-Off Delay Time 75 ns
Fall Time (Typ) 21 ns
Vgs (Max) ±30V
Drive Voltage (Max Rds On,Min Rds On) 10V
Rise Time 27ns
Gate Charge (Qg) (Max) @ Vgs 85nC @ 10V
Current - Continuous Drain (Id) @ 25°C 36A Tc
Input Capacitance (Ciss) (Max) @ Vds 5500pF @ 25V
Vgs(th) (Max) @ Id 5V @ 250μA
Rds On (Max) @ Id, Vgs 170m Ω @ 500mA, 10V
Transistor Application SWITCHING
FET Type N-Channel
Case Connection DRAIN
Power Dissipation 540W
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 540W Tc
Number of Elements 1
Qualification Status Not Qualified
Pin Count 3
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Current Rating 36A
Peak Reflow Temperature (Cel) NOT SPECIFIED
Technology MOSFET (Metal Oxide)
Voltage - Rated DC 500V
Additional Feature AVALANCHE RATED
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Pbfree Code yes
JESD-609 Code e1
Series PolarHV?
Published 2006
Packaging Tube
Operating Temperature -55°C~150°C TJ

Physical

Transistor Element Material SILICON
Number of Pins 3
Package / Case TO-220-3, Short Tab
Mounting Type Through Hole
Mount Through Hole

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