IXTV200N10TS
RoHS
/
Package PLUS-220SMD
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 100V 200A PLUS220SMD
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Technical Details
Compliance
RoHS Status RoHS Compliant
Technical
Avalanche Energy Rating (Eas) 1500 mJ
Pulsed Drain Current-Max (IDM) 500A
Drain to Source Breakdown Voltage 100V
Drain-source On Resistance-Max 0.0055Ohm
Continuous Drain Current (ID) 200A
Turn-Off Delay Time 45 ns
Fall Time (Typ) 34 ns
Vgs (Max) ±30V
Drive Voltage (Max Rds On,Min Rds On) 10V
Rise Time 31ns
Gate Charge (Qg) (Max) @ Vgs 152nC @ 10V
Current - Continuous Drain (Id) @ 25°C 200A Tc
Input Capacitance (Ciss) (Max) @ Vds 9400pF @ 25V
Vgs(th) (Max) @ Id 4.5V @ 250μA
Rds On (Max) @ Id, Vgs 5.5m Ω @ 50A, 10V
Transistor Application SWITCHING
FET Type N-Channel
Case Connection DRAIN
Power Dissipation 550W
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 550W Tc
Number of Elements 1
Qualification Status Not Qualified
JESD-30 Code R-PSSO-G2
Pin Count 3
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Terminal Form GULL WING
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Additional Feature AVALANCHE RATED
ECCN Code EAR99
Number of Terminations 2
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Pbfree Code yes
Series TrenchMV?
Published 2008
Packaging Tube
Operating Temperature -55°C~175°C TJ
Physical
Transistor Element Material SILICON
Number of Pins 3
Package / Case PLUS-220SMD
Mounting Type Surface Mount
Mount Surface Mount
Alternative Model
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