IXTV03N400S
RoHS
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Package PLUS-220SMD
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
Trans MOSFET N-CH 4KV 0.3A 3-Pin(2+Tab) SMD
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Technical Details
Compliance
Lead Free Lead Free
RoHS Status RoHS Compliant
Radiation Hardening No
Technical
Pulsed Drain Current-Max (IDM) 800A
Drain to Source Breakdown Voltage 4kV
Drain Current-Max (Abs) (ID) 300A
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 300mA
Vgs (Max) ±20V
Drive Voltage (Max Rds On,Min Rds On) 10V
Drain to Source Voltage (Vdss) 4000V
Gate Charge (Qg) (Max) @ Vgs 16.3nC @ 10V
Current - Continuous Drain (Id) @ 25°C 300mA Tc
Input Capacitance (Ciss) (Max) @ Vds 435pF @ 25V
Vgs(th) (Max) @ Id 4V @ 250μA
Rds On (Max) @ Id, Vgs 290 Ω @ 500mA, 10V
Transistor Application SWITCHING
FET Type N-Channel
Case Connection DRAIN
Power Dissipation 130W
Operating Mode ENHANCEMENT MODE
Power Dissipation-Max 130W Tc
Configuration SINGLE WITH BUILT-IN DIODE
Number of Elements 1
JESD-30 Code R-PSSO-G2
Pin Count 3
Terminal Form GULL WING
Terminal Position SINGLE
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Additional Feature AVALANCHE RATED
Number of Terminations 2
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Pbfree Code yes
Published 2012
Packaging Tube
Operating Temperature -55°C~150°C TJ
Physical
Transistor Element Material SILICON
Number of Pins 220
Package / Case PLUS-220SMD
Mounting Type Surface Mount
Mount Surface Mount
Alternative Model
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