IXTU2N80P
RoHS
/
Package TO-251-3 Short Leads, IPak, TO-251AA
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH TO-251
PDF
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Buying Options
Total Price: USD $2.15
Unit Price: USD $2.14795
≥1 USD $2.14795
≥10 USD $1.7632
≥100 USD $1.7081
≥500 USD $1.653
≥1000 USD $1.5979
Inventory: 1179
Minimum: 1
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Technical Details
Compliance
RoHS Status RoHS Compliant
Technical
Avalanche Energy Rating (Eas) 100 mJ
Pulsed Drain Current-Max (IDM) 4A
Drain to Source Breakdown Voltage 800V
Drain-source On Resistance-Max 6Ohm
Drain Current-Max (Abs) (ID) 2A
Gate to Source Voltage (Vgs) 30V
Continuous Drain Current (ID) 2A
Turn-Off Delay Time 53 ns
Fall Time (Typ) 28 ns
Vgs (Max) ±30V
Drive Voltage (Max Rds On,Min Rds On) 10V
Rise Time 35ns
Gate Charge (Qg) (Max) @ Vgs 10.6nC @ 10V
Current - Continuous Drain (Id) @ 25°C 2A Tc
Input Capacitance (Ciss) (Max) @ Vds 440pF @ 25V
Vgs(th) (Max) @ Id 5.5V @ 50μA
Rds On (Max) @ Id, Vgs 6 Ω @ 1A, 10V
Transistor Application SWITCHING
FET Type N-Channel
Case Connection DRAIN
Power Dissipation 70W
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 70W Tc
Number of Elements 1
Qualification Status Not Qualified
JESD-30 Code R-PSIP-T3
Pin Count 3
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Technology MOSFET (Metal Oxide)
Additional Feature AVALANCHE RATED
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Pbfree Code yes
Series PolarHV?
Published 2006
Packaging Tube
Operating Temperature -55°C~150°C TJ
Physical
Transistor Element Material SILICON
Package / Case TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type Through Hole
Mount Through Hole
Alternative Model
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