IXTU05N100
RoHS 
RoHS compliant
RoHS compliantPackage TO-251-3 Short Leads, IPak, TO-251AA
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 1000V 750MA TO-251
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Buying Options
Total Price: USD $1.93
Unit Price: USD $1.92565
≥1 USD $1.92565
≥10 USD $1.5808
≥100 USD $1.5314
≥500 USD $1.482
≥1000 USD $1.4326
Inventory: 14305
Minimum: 1
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Technical Details
Physical
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-251-3 Short Leads, IPak, TO-251AA
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2012
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Additional Feature AVALANCHE RATED
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code unknown
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
JESD-30 Code R-PSIP-T3
Qualification Status Not Qualified
Number of Elements 1
Power Dissipation-Max 40W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 40W
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 17 Ω @ 375mA, 10V
Vgs(th) (Max) @ Id 4.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 260pF @ 25V
Current - Continuous Drain (Id) @ 25°C 750mA Tc
Gate Charge (Qg) (Max) @ Vgs 7.8nC @ 10V
Drain to Source Voltage (Vdss) 1000V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Continuous Drain Current (ID) 750mA
Gate to Source Voltage (Vgs) 30V
Drain Current-Max (Abs) (ID) 0.75A
Drain to Source Breakdown Voltage 1kV
Pulsed Drain Current-Max (IDM) 3A
Avalanche Energy Rating (Eas) 100 mJ
Compliance
RoHS Status ROHS3 Compliant
Alternative Model
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