Power Dissipation-Max 1.1W Ta 25W Tc
Element Configuration Single
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 80 Ω @ 50mA, 0V
Vgs(th) (Max) @ Id 5V @ 25μA
Input Capacitance (Ciss) (Max) @ Vds 120pF @ 25V
Current - Continuous Drain (Id) @ 25°C 100mA Tc
Drain to Source Voltage (Vdss) 1000V
Drive Voltage (Max Rds On,Min Rds On) 0V
Turn-Off Delay Time 30 ns
Continuous Drain Current (ID) 100mA
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 0.1A
Drain-source On Resistance-Max 110Ohm
Drain to Source Breakdown Voltage 1kV
Pulsed Drain Current-Max (IDM) 0.4A
FET Feature Depletion Mode
Qualification Status Not Qualified
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Reach Compliance Code unknown
Peak Reflow Temperature (Cel) NOT SPECIFIED
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature -55°C~150°C TJ