IXTT88N30P
RoHS 
RoHS compliant
RoHS compliantPackage TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 300V 88A TO-268
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Buying Options
Total Price: USD $11.99
Unit Price: USD $11.994257
≥1 USD $11.994257
≥10 USD $11.315341
≥100 USD $10.674855
≥500 USD $10.070613
≥1000 USD $9.500574
Inventory: 1166
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 24 Weeks
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2006
Series PolarHT?
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Additional Feature AVALANCHE RATED
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Pin Count 4
JESD-30 Code R-PSSO-G2
Number of Elements 1
Power Dissipation-Max 600W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 600W
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 40m Ω @ 44A, 10V
Vgs(th) (Max) @ Id 5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 6300pF @ 25V
Current - Continuous Drain (Id) @ 25°C 88A Tc
Gate Charge (Qg) (Max) @ Vgs 180nC @ 10V
Rise Time 24 ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 25 ns
Turn-Off Delay Time 96 ns
Continuous Drain Current (ID) 88A
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.04Ohm
Drain to Source Breakdown Voltage 300V
Pulsed Drain Current-Max (IDM) 220A
Avalanche Energy Rating (Eas) 2000 mJ
Compliance
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Alternative Model
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