IXTT80N20L
RoHS 
RoHS compliant
RoHS compliantPackage TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
Trans MOSFET N-CH 200V 80A 3-Pin(2+Tab) TO-268
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Buying Options
Total Price: USD $17.29
Unit Price: USD $17.292
≥1 USD $17.292
≥10 USD $14.33432
≥100 USD $13.43855
≥500 USD $11.467535
Inventory: 723
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Technical Details
Compliance
Lead Free Lead Free
RoHS Status ROHS3 Compliant
Radiation Hardening No
Technical
Avalanche Energy Rating (Eas) 2500 mJ
DS Breakdown Voltage-Min 200V
Pulsed Drain Current-Max (IDM) 340A
Drain-source On Resistance-Max 0.032Ohm
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 80A
Vgs (Max) ±20V
Drive Voltage (Max Rds On,Min Rds On) 10V
Drain to Source Voltage (Vdss) 200V
Gate Charge (Qg) (Max) @ Vgs 180nC @ 10V
Current - Continuous Drain (Id) @ 25°C 80A Tc
Input Capacitance (Ciss) (Max) @ Vds 6160pF @ 25V
Vgs(th) (Max) @ Id 4V @ 250μA
Rds On (Max) @ Id, Vgs 32m Ω @ 40A, 10V
Transistor Application SWITCHING
FET Type N-Channel
Case Connection DRAIN
Power Dissipation 520W
Operating Mode ENHANCEMENT MODE
Power Dissipation-Max 520W Tc
Configuration SINGLE WITH BUILT-IN DIODE
Number of Elements 1
JESD-30 Code R-PSSO-G2
Pin Count 4
Terminal Form GULL WING
Terminal Position SINGLE
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Additional Feature AVALANCHE RATED
ECCN Code EAR99
Number of Terminations 2
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Active
Series Linear?
Published 2010
Packaging Tube
Operating Temperature -55°C~150°C TJ
Physical
Transistor Element Material SILICON
Package / Case TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Mounting Type Surface Mount
Mount Surface Mount
Alternative Model
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