FET Feature Depletion Mode
Drain to Source Breakdown Voltage 1.7kV
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 2A
Turn-Off Delay Time 33 ns
Drain to Source Voltage (Vdss) 1700V
Gate Charge (Qg) (Max) @ Vgs 110nC @ 5V
Current - Continuous Drain (Id) @ 25°C 2A Tj
Input Capacitance (Ciss) (Max) @ Vds 3650pF @ 25V
Rds On (Max) @ Id, Vgs 6.5 Ω @ 1A, 0V
Power Dissipation-Max 568W Tc
Reach Compliance Code unknown
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature -55°C~150°C TJ