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IXTT1N100

IXYS
RoHS
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Package TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description Trans MOSFET N-CH 1KV 1.5A 3-Pin(2+Tab) TO-268
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Technical Details

Compliance

RoHS Status RoHS Compliant

Technical

Avalanche Energy Rating (Eas) 200 mJ
Pulsed Drain Current-Max (IDM) 6A
Drain to Source Breakdown Voltage 1kV
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 1.5A
Turn-Off Delay Time 20 ns
Fall Time (Typ) 18 ns
Vgs (Max) ±20V
Drive Voltage (Max Rds On,Min Rds On) 10V
Drain to Source Voltage (Vdss) 1000V
Rise Time 19ns
Gate Charge (Qg) (Max) @ Vgs 23nC @ 10V
Current - Continuous Drain (Id) @ 25°C 1.5A Tc
Input Capacitance (Ciss) (Max) @ Vds 480pF @ 25V
Vgs(th) (Max) @ Id 4.5V @ 25μA
Rds On (Max) @ Id, Vgs 11 Ω @ 1A, 10V
Transistor Application SWITCHING
FET Type N-Channel
Case Connection DRAIN
Power Dissipation 60W
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 60W Tc
Number of Elements 1
Qualification Status Not Qualified
JESD-30 Code R-PSSO-G2
Pin Count 4
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Terminal Form GULL WING
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Terminal Finish Matte Tin (Sn)
Number of Terminations 2
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Pbfree Code yes
JESD-609 Code e3
Published 2002
Packaging Tube
Operating Temperature -55°C~150°C TJ

Physical

Transistor Element Material SILICON
Package / Case TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Mounting Type Surface Mount
Mount Surface Mount

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