IXTT170N10P
RoHS 
RoHS compliant
RoHS compliantPackage TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
N-Channel 100 V 170 A 9 mO Surface Mount Polar Power Mosfet - TO-268
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Buying Options
Total Price: USD $26.04
Unit Price: USD $26.04235
≥1 USD $26.04235
≥10 USD $21.36835
≥100 USD $20.7005
≥500 USD $20.03265
≥1000 USD $19.36575
≥3000 USD $17.3622
Inventory: 2707
Minimum: 1
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Technical Details
Compliance
Lead Free Lead Free
RoHS Status ROHS3 Compliant
Technical
Avalanche Energy Rating (Eas) 2000 mJ
Pulsed Drain Current-Max (IDM) 350A
Drain to Source Breakdown Voltage 100V
Drain-source On Resistance-Max 0.009Ohm
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 170A
Turn-Off Delay Time 90 ns
Fall Time (Typ) 33 ns
Vgs (Max) ±20V
Drive Voltage (Max Rds On,Min Rds On) 10V
Rise Time 50 ns
Gate Charge (Qg) (Max) @ Vgs 198nC @ 10V
Current - Continuous Drain (Id) @ 25°C 170A Tc
Input Capacitance (Ciss) (Max) @ Vds 6000pF @ 25V
Vgs(th) (Max) @ Id 5V @ 250μA
Rds On (Max) @ Id, Vgs 9m Ω @ 500mA, 10V
Transistor Application SWITCHING
FET Type N-Channel
Case Connection DRAIN
Power Dissipation 714W
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 715W Tc
Number of Elements 1
Qualification Status Not Qualified
JESD-30 Code R-PSSO-G2
Pin Count 4
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Terminal Form GULL WING
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Additional Feature AVALANCHE RATED
Terminal Finish Matte Tin (Sn)
Number of Terminations 2
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Active
Pbfree Code yes
JESD-609 Code e3
Series Polar?
Published 2010
Packaging Tube
Operating Temperature -55°C~175°C TJ
Physical
Transistor Element Material SILICON
Package / Case TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Mounting Type Surface Mount
Mount Surface Mount
Supply Chain
Factory Lead Time 24 Weeks
Alternative Model
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