IXTT12N140
RoHS
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Package TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET High Voltage Power MOSFET
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Technical Details
Compliance
RoHS Status RoHS Compliant
Technical
Avalanche Energy Rating (Eas) 750 mJ
DS Breakdown Voltage-Min 1400V
Pulsed Drain Current-Max (IDM) 40A
Drain-source On Resistance-Max 2Ohm
Continuous Drain Current (ID) 12A
Vgs (Max) ±20V
Drive Voltage (Max Rds On,Min Rds On) 10V
Drain to Source Voltage (Vdss) 1400V
Gate Charge (Qg) (Max) @ Vgs 106nC @ 10V
Current - Continuous Drain (Id) @ 25°C 12A Tc
Input Capacitance (Ciss) (Max) @ Vds 3720pF @ 25V
Vgs(th) (Max) @ Id 4.5V @ 250μA
Rds On (Max) @ Id, Vgs 2 Ω @ 6A, 10V
Transistor Application SWITCHING
FET Type N-Channel
Case Connection DRAIN
Operating Mode ENHANCEMENT MODE
Power Dissipation-Max 890W Tc
Configuration SINGLE WITH BUILT-IN DIODE
Number of Elements 1
Operating Temperature (Max) 150°C
Qualification Status Not Qualified
JESD-30 Code R-PSSO-G2
Pin Count 4
Terminal Form GULL WING
Terminal Position SINGLE
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Additional Feature AVALANCHE RATED
Terminal Finish Matte Tin (Sn)
Number of Terminations 2
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
JESD-609 Code e3
Published 2011
Packaging Tube
Physical
Transistor Element Material SILICON
Package / Case TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Mounting Type Surface Mount
Mount Surface Mount
Alternative Model
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