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IXTT10P60

IXYS
RoHS
RoHS RoHS compliant
Package TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET P-CH 600V 10A TO-268
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Technical Details

Compliance

Lead Free Lead Free
RoHS Status ROHS3 Compliant

Technical

DS Breakdown Voltage-Min 600V
Pulsed Drain Current-Max (IDM) 40A
Drain-source On Resistance-Max 1Ohm
Continuous Drain Current (ID) 10A
Vgs (Max) ±20V
Drive Voltage (Max Rds On,Min Rds On) 10V
Drain to Source Voltage (Vdss) 600V
Gate Charge (Qg) (Max) @ Vgs 160nC @ 10V
Current - Continuous Drain (Id) @ 25°C 10A Tc
Input Capacitance (Ciss) (Max) @ Vds 4700pF @ 25V
Vgs(th) (Max) @ Id 5V @ 250μA
Rds On (Max) @ Id, Vgs 1 Ω @ 5A, 10V
Transistor Application SWITCHING
FET Type P-Channel
Case Connection DRAIN
Operating Mode ENHANCEMENT MODE
Power Dissipation-Max 300W Tc
Configuration SINGLE WITH BUILT-IN DIODE
Number of Elements 1
Qualification Status Not Qualified
JESD-30 Code R-PSSO-G2
Pin Count 4
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Reach Compliance Code not_compliant
Peak Reflow Temperature (Cel) NOT SPECIFIED
Terminal Form GULL WING
Terminal Position SINGLE
Technology MOSFET (Metal Oxide)
Subcategory Other Transistors
Additional Feature AVALANCHE RATED
Terminal Finish Matte Tin (Sn)
Number of Terminations 2
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Active
Pbfree Code yes
JESD-609 Code e3
Published 2012
Packaging Tube
Operating Temperature -55°C~150°C TJ

Physical

Transistor Element Material SILICON
Number of Pins 3
Package / Case TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Mounting Type Surface Mount
Mount Surface Mount

Supply Chain

Factory Lead Time 24 Weeks

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