Operating Temperature -55°C~150°C TJ
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Additional Feature AVALANCHE RATED, UL RECOGNIZED
Subcategory Other Transistors
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Qualification Status Not Qualified
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 312W Tc
Operating Mode ENHANCEMENT MODE
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 48m Ω @ 45A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 12000pF @ 25V
Current - Continuous Drain (Id) @ 25°C 53A Tc
Gate Charge (Qg) (Max) @ Vgs 205nC @ 10V
Drain to Source Voltage (Vdss) 200V
Drive Voltage (Max Rds On,Min Rds On) 10V
Continuous Drain Current (ID) 53A
Drain-source On Resistance-Max 0.048Ohm
Pulsed Drain Current-Max (IDM) 270A
DS Breakdown Voltage-Min 200V