IXTQ69N30PM
RoHS
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Package TO-3P-3 Full Pack
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
DISC MOSFET N-CH STD-POLAR TO-3P
PDF
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Buying Options
Total Price: USD $8.42
Unit Price: USD $8.417481
≥1 USD $8.417481
≥10 USD $7.941021
≥100 USD $7.491538
≥500 USD $7.06748
≥1000 USD $6.667432
Inventory: 1217
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 24 Weeks
Physical
Mounting Type Through Hole
Package / Case TO-3P-3 Full Pack
Surface Mount NO
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Published 2012
Pbfree Code yes
Part Status Active
Number of Terminations 3
ECCN Code EAR99
Additional Feature AVALANCHE RATED
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
JESD-30 Code R-PSFM-T3
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 90W Tc
Operating Mode ENHANCEMENT MODE
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 49m Ω @ 34.5A, 10V
Vgs(th) (Max) @ Id 5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 4960pF @ 25V
Current - Continuous Drain (Id) @ 25°C 25A Tc
Gate Charge (Qg) (Max) @ Vgs 156nC @ 10V
Drain to Source Voltage (Vdss) 300V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Drain Current-Max (Abs) (ID) 25A
Drain-source On Resistance-Max 0.049Ohm
Pulsed Drain Current-Max (IDM) 200A
DS Breakdown Voltage-Min 300V
Avalanche Energy Rating (Eas) 1500 mJ
Alternative Model
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