IXTQ60N20L2
RoHS 
RoHS compliant
RoHS compliantPackage TO-3P-3, SC-65-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 200V 60A TO-3P
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Buying Options
Total Price: USD $16.39
Unit Price: USD $16.3944
≥1 USD $16.3944
≥10 USD $13.27304
≥100 USD $12.49241
≥500 USD $11.321235
Inventory: 176
Minimum: 1
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Technical Details
Compliance
RoHS Status ROHS3 Compliant
Technical
Avalanche Energy Rating (Eas) 2000 mJ
Pulsed Drain Current-Max (IDM) 150A
Drain to Source Breakdown Voltage 200V
Drain-source On Resistance-Max 0.045Ohm
Continuous Drain Current (ID) 60A
Turn-Off Delay Time 90 ns
Vgs (Max) ±20V
Drive Voltage (Max Rds On,Min Rds On) 10V
Gate Charge (Qg) (Max) @ Vgs 255nC @ 10V
Current - Continuous Drain (Id) @ 25°C 60A Tc
Input Capacitance (Ciss) (Max) @ Vds 10500pF @ 25V
Vgs(th) (Max) @ Id 4.5V @ 250μA
Rds On (Max) @ Id, Vgs 45m Ω @ 30A, 10V
Transistor Application AMPLIFIER
FET Type N-Channel
Case Connection DRAIN
Power Dissipation 540W
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 540W Tc
Number of Elements 1
Qualification Status Not Qualified
JESD-30 Code R-PSFM-T3
Pin Count 3
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Additional Feature AVALANCHE RATED
Terminal Finish Pure Tin (Sn)
ECCN Code EAR99
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Active
Pbfree Code yes
Series Linear L2?
Published 2009
Packaging Tube
Operating Temperature -55°C~150°C TJ
Physical
Transistor Element Material SILICON
Package / Case TO-3P-3, SC-65-3
Mounting Type Through Hole
Mount Through Hole
Supply Chain
Factory Lead Time 24 Weeks
Alternative Model
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