IXTQ32P20T
RoHS 
RoHS compliant
RoHS compliantPackage TO-3P-3, SC-65-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
DISCMSFT PCHAN-TRENCH GATE TO-3P
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Technical Details
Compliance
RoHS Status RoHS Compliant
Technical
Avalanche Energy Rating (Eas) 1000 mJ
DS Breakdown Voltage-Min 200V
Pulsed Drain Current-Max (IDM) 96A
Drain-source On Resistance-Max 0.13Ohm
Drain Current-Max (Abs) (ID) 32A
Vgs (Max) ±15V
Drive Voltage (Max Rds On,Min Rds On) 10V
Drain to Source Voltage (Vdss) 200V
Gate Charge (Qg) (Max) @ Vgs 185nC @ 10V
Current - Continuous Drain (Id) @ 25°C 32A Tc
Input Capacitance (Ciss) (Max) @ Vds 14500pF @ 25V
Vgs(th) (Max) @ Id 4V @ 250μA
Rds On (Max) @ Id, Vgs 130m Ω @ 16A, 10V
Transistor Application SWITCHING
FET Type P-Channel
Case Connection DRAIN
Operating Mode ENHANCEMENT MODE
Power Dissipation-Max 300W Tc
Configuration SINGLE WITH BUILT-IN DIODE
Number of Elements 1
Qualification Status Not Qualified
JESD-30 Code R-PSFM-T3
Pin Count 3
Reach Compliance Code compliant
Terminal Position SINGLE
Technology MOSFET (Metal Oxide)
Subcategory Other Transistors
Additional Feature AVALANCHE RATED
ECCN Code EAR99
Number of Terminations 3
Part Status Active
Operating Temperature -55°C~150°C TJ
Physical
Transistor Element Material SILICON
Surface Mount NO
Package / Case TO-3P-3, SC-65-3
Mounting Type Through Hole
Supply Chain
Factory Lead Time 24 Weeks
Alternative Model
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