IXTQ200N06P
RoHS 
RoHS compliant
RoHS compliantPackage TO-3P-3, SC-65-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 60V 200A TO-3P
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Buying Options
Total Price: USD $17.14
Unit Price: USD $17.13515
≥1 USD $17.13515
≥10 USD $14.06
≥100 USD $13.6211
≥500 USD $13.18125
≥1000 USD $12.74235
Inventory: 1373
Minimum: 1
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Technical Details
Compliance
RoHS Status ROHS3 Compliant
Technical
Avalanche Energy Rating (Eas) 4000 mJ
Pulsed Drain Current-Max (IDM) 400A
Drain to Source Breakdown Voltage 60V
Drain-source On Resistance-Max 0.006Ohm
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 200A
Turn-Off Delay Time 90 ns
Fall Time (Typ) 40 ns
Vgs (Max) ±20V
Drive Voltage (Max Rds On,Min Rds On) 10V
Rise Time 60ns
Gate Charge (Qg) (Max) @ Vgs 200nC @ 10V
Current - Continuous Drain (Id) @ 25°C 200A Tc
Input Capacitance (Ciss) (Max) @ Vds 5400pF @ 25V
Vgs(th) (Max) @ Id 5V @ 250μA
Rds On (Max) @ Id, Vgs 5m Ω @ 400A, 15V
Transistor Application SWITCHING
FET Type N-Channel
Case Connection DRAIN
Power Dissipation 714W
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 714W Tc
Number of Elements 1
Qualification Status Not Qualified
Pin Count 3
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Technology MOSFET (Metal Oxide)
Additional Feature AVALANCHE RATED
Terminal Finish Matte Tin (Sn)
ECCN Code EAR99
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Active
Pbfree Code yes
JESD-609 Code e3
Series PolarHT?
Published 2006
Packaging Tube
Operating Temperature -55°C~175°C TJ
Physical
Transistor Element Material SILICON
Number of Pins 3
Package / Case TO-3P-3, SC-65-3
Mounting Type Through Hole
Mount Through Hole
Supply Chain
Factory Lead Time 10 Weeks
Alternative Model
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