IXTQ160N10T
RoHS 
RoHS compliant
RoHS compliantPackage TO-3P-3, SC-65-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 100V 160A TO-3P
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Buying Options
Total Price: USD $6.59
Unit Price: USD $6.59015
≥1 USD $6.59015
≥10 USD $5.4074
≥100 USD $5.2383
≥500 USD $5.0692
≥1000 USD $4.9001
Inventory: 10115
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 8 Weeks
Physical
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-3P-3, SC-65-3
Number of Pins 3
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2006
Series TrenchMV?
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish PURE TIN
Additional Feature AVALANCHE RATED
Subcategory FET General Purpose Powers
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code unknown
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
Qualification Status Not Qualified
Number of Elements 1
Power Dissipation-Max 430W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 430W
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 7m Ω @ 25A, 10V
Vgs(th) (Max) @ Id 4.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 6600pF @ 25V
Current - Continuous Drain (Id) @ 25°C 160A Tc
Gate Charge (Qg) (Max) @ Vgs 132nC @ 10V
Rise Time 61ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 42 ns
Turn-Off Delay Time 49 ns
Continuous Drain Current (ID) 160A
Drain-source On Resistance-Max 0.007Ohm
Drain to Source Breakdown Voltage 100V
Avalanche Energy Rating (Eas) 500 mJ
Compliance
RoHS Status ROHS3 Compliant
Alternative Model
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