IXTQ150N06P
RoHS 
RoHS compliant
RoHS compliantPackage TO-3P-3, SC-65-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 60V 150A TO-3P
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Technical Details
Physical
Number of Pins 3
Transistor Element Material SILICON
Package / Case TO-3P-3, SC-65-3
Mounting Type Through Hole
Mount Through Hole
Technical
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2006
Series PolarHT?
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Additional Feature AVALANCHE RATED
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
Qualification Status Not Qualified
Number of Elements 1
Power Dissipation-Max 480W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 480W
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 10m Ω @ 75A, 10V
Vgs(th) (Max) @ Id 5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 3000pF @ 25V
Current - Continuous Drain (Id) @ 25°C 150A Tc
Gate Charge (Qg) (Max) @ Vgs 118nC @ 10V
Rise Time 53ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 45 ns
Turn-Off Delay Time 66 ns
Continuous Drain Current (ID) 150A
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.01Ohm
Drain to Source Breakdown Voltage 60V
Pulsed Drain Current-Max (IDM) 280A
Avalanche Energy Rating (Eas) 2500 mJ
Compliance
RoHS Status ROHS3 Compliant
Alternative Model
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