IXTP90N055T
RoHS
/
Package TO-220-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 55V 90A TO-220
PDF
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Buying Options
Total Price: USD $1.07
Unit Price: USD $1.0735
≥1 USD $1.0735
≥10 USD $0.88065
≥100 USD $0.8531
≥500 USD $0.82555
≥1000 USD $0.798
Inventory: 31243
Minimum: 1
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Technical Details
Compliance
RoHS Status RoHS Compliant
Technical
Avalanche Energy Rating (Eas) 400 mJ
Pulsed Drain Current-Max (IDM) 240A
Drain to Source Breakdown Voltage 55V
Drain-source On Resistance-Max 0.0088Ohm
JEDEC-95 Code TO-220AB
Continuous Drain Current (ID) 90A
Turn-Off Delay Time 40 ns
Fall Time (Typ) 20 ns
Vgs (Max) ±20V
Drive Voltage (Max Rds On,Min Rds On) 10V
Rise Time 30ns
Gate Charge (Qg) (Max) @ Vgs 61nC @ 10V
Current - Continuous Drain (Id) @ 25°C 90A Tc
Input Capacitance (Ciss) (Max) @ Vds 2500pF @ 25V
Vgs(th) (Max) @ Id 4V @ 50μA
Rds On (Max) @ Id, Vgs 8.8m Ω @ 25A, 10V
Transistor Application SWITCHING
FET Type N-Channel
Case Connection DRAIN
Power Dissipation 176W
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 176W Tc
Number of Elements 1
Qualification Status Not Qualified
JESD-30 Code R-PSFM-T3
Pin Count 3
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Technology MOSFET (Metal Oxide)
Additional Feature AVALANCHE RATED
Terminal Finish Matte Tin (Sn)
ECCN Code EAR99
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Pbfree Code yes
JESD-609 Code e3
Series TrenchT2?
Published 2006
Packaging Tube
Operating Temperature -55°C~175°C TJ
Physical
Transistor Element Material SILICON
Package / Case TO-220-3
Mounting Type Through Hole
Mount Through Hole
Alternative Model
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