IXTP7N60P
RoHS
/
Package TO-220-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 600V 7A TO-220
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Technical Details
Compliance
Lead Free Lead Free
RoHS Status RoHS Compliant
Dimensions
Width 4.83mm
Length 10.66mm
Height 9.15mm
Technical
Avalanche Energy Rating (Eas) 400 mJ
Pulsed Drain Current-Max (IDM) 14A
Drain to Source Breakdown Voltage 600V
Drain Current-Max (Abs) (ID) 7A
Gate to Source Voltage (Vgs) 30V
JEDEC-95 Code TO-220AB
Continuous Drain Current (ID) 7A
Turn-Off Delay Time 65 ns
Fall Time (Typ) 26 ns
Vgs (Max) ±30V
Drive Voltage (Max Rds On,Min Rds On) 10V
Rise Time 27 ns
Gate Charge (Qg) (Max) @ Vgs 20nC @ 10V
Current - Continuous Drain (Id) @ 25°C 7A Tc
Input Capacitance (Ciss) (Max) @ Vds 1080pF @ 25V
Vgs(th) (Max) @ Id 5.5V @ 100μA
Rds On (Max) @ Id, Vgs 1.1 Ω @ 3.5A, 10V
Transistor Application SWITCHING
FET Type N-Channel
Turn On Delay Time 20 ns
Case Connection DRAIN
Power Dissipation 150W
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 150W Tc
Number of Elements 1
Qualification Status Not Qualified
Pin Count 3
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Current Rating 7A
Peak Reflow Temperature (Cel) NOT SPECIFIED
Technology MOSFET (Metal Oxide)
Voltage - Rated DC 600V
Additional Feature AVALANCHE RATED
Terminal Finish Matte Tin (Sn)
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Pbfree Code yes
JESD-609 Code e3
Series PolarHV?
Published 2006
Packaging Tube
Operating Temperature -55°C~150°C TJ
Physical
Transistor Element Material SILICON
Number of Pins 3
Package / Case TO-220-3
Mounting Type Through Hole
Mount Through Hole
Supply Chain
Factory Lead Time 8 Weeks
Alternative Model
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