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IXTP6N50P

IXYS
RoHS
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Package TO-220-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 500V 6A TO-220
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Technical Details

Supply Chain

Factory Lead Time 8 Weeks

Physical

Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Supplier Device Package TO-220AB

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2006
Series PolarHV?
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Voltage - Rated DC 500V
Technology MOSFET (Metal Oxide)
Current Rating 6A
Power Dissipation-Max 100W Tc
Element Configuration Single
Power Dissipation 100W
FET Type N-Channel
Rds On (Max) @ Id, Vgs 1.1Ohm @ 3A, 10V
Vgs(th) (Max) @ Id 5V @ 50μA
Input Capacitance (Ciss) (Max) @ Vds 740pF @ 25V
Current - Continuous Drain (Id) @ 25°C 6A Tc
Gate Charge (Qg) (Max) @ Vgs 14.6nC @ 10V
Rise Time 28ns
Drain to Source Voltage (Vdss) 500V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 26 ns
Turn-Off Delay Time 65 ns
Continuous Drain Current (ID) 6A
Gate to Source Voltage (Vgs) 30V
Drain to Source Breakdown Voltage 500V
Input Capacitance 740pF
Drain to Source Resistance 1.1Ohm
Rds On Max 1.1 Ω

Compliance

RoHS Status RoHS Compliant
Lead Free Lead Free

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