IXTP6N100D2
RoHS 
RoHS compliant
RoHS compliantPackage TO-220-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 1000V 6A TO220AB
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Buying Options
Total Price: USD $6.5
Unit Price: USD $6.503979
≥1 USD $6.503979
≥10 USD $6.135827
≥100 USD $5.788514
≥500 USD $5.460868
≥1000 USD $5.151759
Inventory: 1117
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 24 Weeks
Physical
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2009
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code unknown
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
JESD-30 Code R-PSFM-T3
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 300W Tc
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 2.2 Ω @ 3A, 0V
Input Capacitance (Ciss) (Max) @ Vds 2650pF @ 25V
Current - Continuous Drain (Id) @ 25°C 6A Tc
Gate Charge (Qg) (Max) @ Vgs 95nC @ 5V
Drain to Source Voltage (Vdss) 1000V
Vgs (Max) ±20V
Continuous Drain Current (ID) 6A
JEDEC-95 Code TO-220AB
FET Feature Depletion Mode
Compliance
RoHS Status ROHS3 Compliant
Alternative Model
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