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IXTP52P10P

IXYS
RoHS
RoHS RoHS compliant
Package TO-220-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET P-CH 100V 52A TO-220
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Buying Options
Total Price: USD $5.67
Unit Price: USD $5.6672
≥1 USD $5.6672
≥10 USD $4.52584
≥100 USD $4.049408
≥500 USD $3.572976
≥1000 USD $3.215678
≥3000 USD $3.013208
Inventory: 477
Minimum: 1
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Technical Details

Supply Chain

Factory Lead Time 24 Weeks

Physical

Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2008
Series PolarP?
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish PURE TIN
Additional Feature AVALANCHE RATED
Subcategory Other Transistors
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code unknown
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
JESD-30 Code R-PSFM-T3
Qualification Status Not Qualified
Number of Elements 1
Power Dissipation-Max 300W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 300W
Case Connection DRAIN
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 50m Ω @ 500mA, 10V
Vgs(th) (Max) @ Id 4.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 2845pF @ 25V
Current - Continuous Drain (Id) @ 25°C 52A Tc
Gate Charge (Qg) (Max) @ Vgs 60nC @ 10V
Rise Time 29 ns
Drain to Source Voltage (Vdss) 100V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 22 ns
Turn-Off Delay Time 38 ns
Continuous Drain Current (ID) 52A
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.05Ohm
Drain to Source Breakdown Voltage -100V

Compliance

RoHS Status ROHS3 Compliant
Lead Free Lead Free

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