IXTP50N25T
RoHS 
RoHS compliant
RoHS compliantPackage TO-220-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 250V 50A TO-220
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Buying Options
Total Price: USD $3.59
Unit Price: USD $3.5948
≥1 USD $3.5948
≥10 USD $2.94975
≥100 USD $2.8576
≥500 USD $2.76545
≥1000 USD $2.6733
≥3000 USD $2.39685
Inventory: 1557
Minimum: 1
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Technical Details
Compliance
Lead Free Lead Free
RoHS Status ROHS3 Compliant
Technical
Avalanche Energy Rating (Eas) 1500 mJ
Drain to Source Breakdown Voltage 250V
Drain-source On Resistance-Max 0.05Ohm
Gate to Source Voltage (Vgs) 30V
JEDEC-95 Code TO-220AB
Continuous Drain Current (ID) 50A
Vgs (Max) ±30V
Drive Voltage (Max Rds On,Min Rds On) 10V
Gate Charge (Qg) (Max) @ Vgs 78nC @ 10V
Current - Continuous Drain (Id) @ 25°C 50A Tc
Input Capacitance (Ciss) (Max) @ Vds 4000pF @ 25V
Vgs(th) (Max) @ Id 5V @ 1mA
Rds On (Max) @ Id, Vgs 50m Ω @ 25A, 10V
Transistor Application SWITCHING
FET Type N-Channel
Case Connection DRAIN
Power Dissipation 400W
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 400W Tc
Number of Elements 1
Qualification Status Not Qualified
Pin Count 3
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Reach Compliance Code unknown
Peak Reflow Temperature (Cel) NOT SPECIFIED
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Additional Feature AVALANCHE RATED
Terminal Finish TIN SILVER COPPER
ECCN Code EAR99
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Active
Pbfree Code yes
JESD-609 Code e1
Published 2009
Packaging Tube
Operating Temperature -55°C~150°C TJ
Physical
Transistor Element Material SILICON
Number of Pins 3
Package / Case TO-220-3
Mounting Type Through Hole
Mount Through Hole
Supply Chain
Factory Lead Time 26 Weeks
Alternative Model
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