IXTP4N80P
RoHS 
RoHS compliant
RoHS compliantPackage TO-220-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
IXYS SEMICONDUCTOR IXTP4N80P Power MOSFET, N Channel, 4 A, 800 V, 3 ohm, 10 V, 5.5 V
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Buying Options
Total Price: USD $2.36
Unit Price: USD $2.358022
≥1 USD $2.358022
≥10 USD $2.224548
≥100 USD $2.098635
≥500 USD $1.979838
≥1000 USD $1.867773
Inventory: 1165
Minimum: 1
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Technical Details
Compliance
Lead Free Lead Free
RoHS Status ROHS3 Compliant
REACH SVHC No SVHC
Technical
Avalanche Energy Rating (Eas) 250 mJ
Pulsed Drain Current-Max (IDM) 8A
Drain to Source Breakdown Voltage 800V
Gate to Source Voltage (Vgs) 30V
JEDEC-95 Code TO-220AB
Threshold Voltage 5.5V
Continuous Drain Current (ID) 3.6A
Turn-Off Delay Time 60 ns
Fall Time (Typ) 29 ns
Vgs (Max) ±30V
Drive Voltage (Max Rds On,Min Rds On) 10V
Rise Time 24 ns
Gate Charge (Qg) (Max) @ Vgs 14.2nC @ 10V
Current - Continuous Drain (Id) @ 25°C 3.6A Tc
Input Capacitance (Ciss) (Max) @ Vds 750pF @ 25V
Vgs(th) (Max) @ Id 5.5V @ 100μA
Rds On (Max) @ Id, Vgs 3.4 Ω @ 500mA, 10V
Transistor Application SWITCHING
FET Type N-Channel
Case Connection DRAIN
Power Dissipation 100W
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 100W Tc
Number of Elements 1
Qualification Status Not Qualified
Pin Count 3
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Technology MOSFET (Metal Oxide)
Additional Feature AVALANCHE RATED
Terminal Finish Matte Tin (Sn)
ECCN Code EAR99
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Active
Pbfree Code yes
JESD-609 Code e3
Series PolarHV?
Published 2004
Packaging Tube
Operating Temperature -55°C~150°C TJ
Physical
Transistor Element Material SILICON
Number of Pins 3
Package / Case TO-220-3
Mounting Type Through Hole
Mount Through Hole
Supply Chain
Factory Lead Time 24 Weeks
Alternative Model
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