IXTP460P2
RoHS 
RoHS compliant
RoHS compliantPackage TO-220-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
Trans MOSFET N-CH 500V 24A 3-Pin(3+Tab) TO-220AB
PDF
/
Buying Options
Total Price: USD $4.7
Unit Price: USD $4.6992
≥1 USD $4.6992
≥10 USD $3.723808
≥100 USD $3.191848
Inventory: 300
Minimum: 1
-
+
Technical Details
Supply Chain
Factory Lead Time 24 Weeks
Physical
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2010
Series PolarP2?
JESD-609 Code e1
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Additional Feature AVALANCHE RATED
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Pin Count 3
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 480W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 480W
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 270m Ω @ 12A, 10V
Vgs(th) (Max) @ Id 4.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 2890pF @ 25V
Current - Continuous Drain (Id) @ 25°C 24A Tc
Gate Charge (Qg) (Max) @ Vgs 48nC @ 10V
Drain to Source Voltage (Vdss) 500V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Continuous Drain Current (ID) 24A
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 30V
Drain-source On Resistance-Max 0.27Ohm
Pulsed Drain Current-Max (IDM) 50A
DS Breakdown Voltage-Min 500V
Avalanche Energy Rating (Eas) 750 mJ
Compliance
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Alternative Model
Recommended For You
IXTP460P2+price,IXTP460P2+datasheet,IXTP460P2+in stock,buy+IXTP460P2,finder+IXTP460P2,IXTP460P2+tutorials,IXTP460P2+download