IXTP34N65X2
RoHS
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Package TO-220-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH
PDF
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Buying Options
Total Price: USD $5.8
Unit Price: USD $5.7992
≥1 USD $5.7992
≥10 USD $4.626336
≥100 USD $4.139432
≥500 USD $3.65244
≥1000 USD $3.287187
≥3000 USD $3.08022
Inventory: 205
Minimum: 1
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Technical Details
Technical
Vgs (Max) ±30V
Drive Voltage (Max Rds On,Min Rds On) 10V
Drain to Source Voltage (Vdss) 650V
Gate Charge (Qg) (Max) @ Vgs 54nC @ 10V
Current - Continuous Drain (Id) @ 25°C 34A Tc
Input Capacitance (Ciss) (Max) @ Vds 3000pF @ 25V
Vgs(th) (Max) @ Id 5V @ 250μA
Rds On (Max) @ Id, Vgs 96m Ω @ 17A, 10V
FET Type N-Channel
Power Dissipation-Max 540W Tc
Reach Compliance Code compliant
Technology MOSFET (Metal Oxide)
Part Status Active
Packaging Tube
Operating Temperature -55°C~150°C TJ
Physical
Package / Case TO-220-3
Mounting Type Through Hole
Supply Chain
Factory Lead Time 15 Weeks
Alternative Model
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