IXTP30N25L2
RoHS
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Package TO-220-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
DISC MOSFET N-CH LINEAR L2 TO-22
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Inventory: 2969
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Technical Details
Technical
Vgs (Max) ±20V
Drive Voltage (Max Rds On,Min Rds On) 10V
Drain to Source Voltage (Vdss) 250V
Gate Charge (Qg) (Max) @ Vgs 130nC @ 10V
Current - Continuous Drain (Id) @ 25°C 30A Tc
Input Capacitance (Ciss) (Max) @ Vds 3200pF @ 25V
Vgs(th) (Max) @ Id 4.5V @ 250μA
Rds On (Max) @ Id, Vgs 140m Ω @ 15A, 10V
FET Type N-Channel
Power Dissipation-Max 355W Tc
Reach Compliance Code compliant
Technology MOSFET (Metal Oxide)
Part Status Active
Operating Temperature -55°C~150°C TJ
Physical
Package / Case TO-220-3
Mounting Type Through Hole
Supply Chain
Factory Lead Time 24 Weeks
Alternative Model
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