IXTP2N60P
RoHS
/
Package TO-220-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 600V 2A TO-220
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Buying Options
Total Price: USD $2.73
Unit Price: USD $2.73315
≥1 USD $2.73315
≥10 USD $2.24295
≥100 USD $2.17265
≥500 USD $2.10235
≥1000 USD $2.03205
Inventory: 1189
Minimum: 1
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Technical Details
Compliance
Lead Free Lead Free
RoHS Status RoHS Compliant
Technical
Avalanche Energy Rating (Eas) 150 mJ
Pulsed Drain Current-Max (IDM) 4A
Drain to Source Breakdown Voltage 600V
Drain Current-Max (Abs) (ID) 2A
Gate to Source Voltage (Vgs) 30V
JEDEC-95 Code TO-220AB
Continuous Drain Current (ID) 2A
Turn-Off Delay Time 60 ns
Fall Time (Typ) 23 ns
Vgs (Max) ±30V
Drive Voltage (Max Rds On,Min Rds On) 10V
Rise Time 20 ns
Gate Charge (Qg) (Max) @ Vgs 7nC @ 10V
Current - Continuous Drain (Id) @ 25°C 2A Tc
Input Capacitance (Ciss) (Max) @ Vds 240pF @ 25V
Vgs(th) (Max) @ Id 5V @ 250μA
Rds On (Max) @ Id, Vgs 5.1 Ω @ 1A, 10V
Transistor Application SWITCHING
FET Type N-Channel
Case Connection DRAIN
Power Dissipation 55W
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 55W Tc
Number of Elements 1
Qualification Status Not Qualified
Pin Count 3
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Current Rating 2A
Peak Reflow Temperature (Cel) NOT SPECIFIED
Technology MOSFET (Metal Oxide)
Voltage - Rated DC 600V
Subcategory FET General Purpose Power
Additional Feature AVALANCHE RATED
Terminal Finish Pure Tin (Sn)
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Pbfree Code yes
Series Polar?
Published 2010
Packaging Tube
Operating Temperature -55°C~150°C TJ
Physical
Transistor Element Material SILICON
Number of Pins 3
Package / Case TO-220-3
Mounting Type Through Hole
Mount Through Hole
Supply Chain
Factory Lead Time 25 Weeks
Alternative Model
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