IXTP2N100P
RoHS 
RoHS compliant
RoHS compliantPackage TO-220-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 1000V 2A TO-220
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Buying Options
Total Price: USD $2.98
Unit Price: USD $2.9832
≥1 USD $2.9832
≥10 USD $2.362272
≥100 USD $2.024792
≥500 USD $1.799776
≥1000 USD $1.541065
≥3000 USD $1.451076
Inventory: 210
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 17 Weeks
Physical
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2008
Series Polar?
JESD-609 Code e1
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Additional Feature AVALANCHE RATED
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
JESD-30 Code R-PSFM-T3
Qualification Status Not Qualified
Number of Elements 1
Power Dissipation-Max 86W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 86W
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 7.5 Ω @ 500mA, 10V
Vgs(th) (Max) @ Id 4.5V @ 100μA
Input Capacitance (Ciss) (Max) @ Vds 655pF @ 25V
Current - Continuous Drain (Id) @ 25°C 2A Tc
Gate Charge (Qg) (Max) @ Vgs 24.3nC @ 10V
Rise Time 29 ns
Drain to Source Voltage (Vdss) 1000V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 27 ns
Turn-Off Delay Time 80 ns
Continuous Drain Current (ID) 2A
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 2A
Drain to Source Breakdown Voltage 1kV
Pulsed Drain Current-Max (IDM) 5A
Compliance
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Alternative Model
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