IXTP26P10T
RoHS 
RoHS compliant
RoHS compliantPackage TO-220-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET MOSFET P-CH 200V 26A TO-220
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Buying Options
Total Price: USD $3.33
Unit Price: USD $3.3288
≥1 USD $3.3288
≥10 USD $2.73125
≥100 USD $2.64575
≥500 USD $2.56025
≥1000 USD $2.4757
Inventory: 31276
Minimum: 1
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Technical Details
Physical
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2012
Series TrenchP?
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Additional Feature AVALANCHE RATED
Subcategory Other Transistors
Technology MOSFET (Metal Oxide)
Reach Compliance Code unknown
Pin Count 3
JESD-30 Code R-PSFM-T3
Qualification Status Not Qualified
Number of Elements 1
Power Dissipation-Max 150W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 150W
Case Connection DRAIN
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 90m Ω @ 13A, 10V
Vgs(th) (Max) @ Id 4.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 3820pF @ 25V
Current - Continuous Drain (Id) @ 25°C 26A Tc
Gate Charge (Qg) (Max) @ Vgs 52nC @ 10V
Rise Time 15ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±15V
Fall Time (Typ) 1 ns
Turn-Off Delay Time 37 ns
Continuous Drain Current (ID) 26A
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 15V
Drain-source On Resistance-Max 0.09Ohm
Drain to Source Breakdown Voltage 100V
Pulsed Drain Current-Max (IDM) 80A
Avalanche Energy Rating (Eas) 300 mJ
Compliance
RoHS Status ROHS3 Compliant
Alternative Model
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