IXTP220N04T2
RoHS 
RoHS compliant
RoHS compliantPackage TO-220-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 40V 220A TO-220
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Buying Options
Total Price: USD $3.44
Unit Price: USD $3.4408
≥1 USD $3.4408
≥10 USD $2.7236
≥100 USD $2.334464
≥500 USD $2.075093
≥1000 USD $1.776808
≥3000 USD $1.673047
Inventory: 19
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 24 Weeks
Physical
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2008
Series TrenchT2?
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Additional Feature AVALANCHE RATED
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
JESD-30 Code R-PSFM-T3
Qualification Status Not Qualified
Number of Elements 1
Voltage 40V
Power Dissipation-Max 360W Tc
Element Configuration Single
Current 75A
Operating Mode ENHANCEMENT MODE
Power Dissipation 360W
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 3.5m Ω @ 50A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 6820pF @ 25V
Current - Continuous Drain (Id) @ 25°C 220A Tc
Gate Charge (Qg) (Max) @ Vgs 112nC @ 10V
Rise Time 21 ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 21 ns
Turn-Off Delay Time 31 ns
Continuous Drain Current (ID) 220A
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.0035Ohm
Drain to Source Breakdown Voltage 40V
Avalanche Energy Rating (Eas) 600 mJ
Compliance
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Alternative Model
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