IXTP1R6N50D2
RoHS 
RoHS compliant
RoHS compliantPackage TO-220-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 500V 1.6A TO220AB
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Buying Options
Total Price: USD $3.12
Unit Price: USD $3.1152
≥1 USD $3.1152
≥10 USD $2.467872
≥100 USD $2.115344
≥500 USD $1.880278
≥1000 USD $1.609986
≥3000 USD $1.515976
Inventory: 109
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 24 Weeks
Physical
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2009
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Additional Feature UL RECOGNIZED
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code unknown
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
JESD-30 Code R-PSFM-T3
Qualification Status Not Qualified
Number of Elements 1
Power Dissipation-Max 100W Tc
Element Configuration Single
Power Dissipation 100W
Case Connection DRAIN
FET Type N-Channel
Transistor Application AMPLIFIER
Rds On (Max) @ Id, Vgs 2.3 Ω @ 800mA, 0V
Input Capacitance (Ciss) (Max) @ Vds 645pF @ 25V
Current - Continuous Drain (Id) @ 25°C 1.6A Tc
Gate Charge (Qg) (Max) @ Vgs 23.7nC @ 5V
Rise Time 70ns
Vgs (Max) ±20V
Fall Time (Typ) 41 ns
Turn-Off Delay Time 35 ns
Continuous Drain Current (ID) 1.6A
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 500V
FET Feature Depletion Mode
Compliance
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Alternative Model
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