IXTP1N120P
RoHS 
RoHS compliant
RoHS compliantPackage TO-220-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 1200V 1A TO-220
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Buying Options
Total Price: USD $19.39
Unit Price: USD $19.392247
≥1 USD $19.392247
≥10 USD $18.294568
≥100 USD $17.259032
≥500 USD $16.282108
≥1000 USD $15.36047
Inventory: 1165
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 24 Weeks
Physical
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2007
Series PolarVHV?
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Additional Feature AVALANCHE RATED
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
Qualification Status Not Qualified
Number of Elements 1
Power Dissipation-Max 63W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 63W
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 20 Ω @ 500mA, 10V
Vgs(th) (Max) @ Id 4.5V @ 50μA
Input Capacitance (Ciss) (Max) @ Vds 550pF @ 25V
Current - Continuous Drain (Id) @ 25°C 1A Tc
Gate Charge (Qg) (Max) @ Vgs 17.6nC @ 10V
Rise Time 28 ns
Drain to Source Voltage (Vdss) 1200V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 27 ns
Turn-Off Delay Time 54 ns
Continuous Drain Current (ID) 1A
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 1A
Drain to Source Breakdown Voltage 1.2kV
Pulsed Drain Current-Max (IDM) 1.8A
Avalanche Energy Rating (Eas) 100 mJ
Compliance
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Alternative Model
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