IXTP182N055T
RoHS
/
Package TO-220-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 55V 182A TO-220
PDF
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Buying Options
Total Price: USD $2.29
Unit Price: USD $2.2857
≥1 USD $2.2857
≥10 USD $1.8753
≥100 USD $1.8164
≥500 USD $1.75845
≥1000 USD $1.69955
Inventory: 9719
Minimum: 1
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Technical Details
Physical
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2006
Series TrenchMV?
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Additional Feature AVALANCHE RATED
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
Qualification Status Not Qualified
Number of Elements 1
Power Dissipation-Max 360W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 360W
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 5m Ω @ 25A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 4850pF @ 25V
Current - Continuous Drain (Id) @ 25°C 182A Tc
Gate Charge (Qg) (Max) @ Vgs 114nC @ 10V
Rise Time 35ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 38 ns
Turn-Off Delay Time 53 ns
Continuous Drain Current (ID) 182A
JEDEC-95 Code TO-220AB
Drain-source On Resistance-Max 0.005Ohm
Drain to Source Breakdown Voltage 55V
Pulsed Drain Current-Max (IDM) 490A
Avalanche Energy Rating (Eas) 1000 mJ
Compliance
RoHS Status RoHS Compliant
Alternative Model
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