IXTP15N50L2
RoHS 
RoHS compliant
RoHS compliantPackage TO-220-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
IXYS SEMICONDUCTOR IXTP15N50L2 MOSFET Transistor, LINEAR L2, N Channel, 15 A, 500 V, 480 mohm, 10 V, 2.5 V
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Buying Options
Total Price: USD $64.76
Unit Price: USD $64.75675
≥1 USD $64.75675
≥10 USD $53.13445
≥100 USD $51.47385
≥500 USD $49.81325
≥1000 USD $48.15265
≥3000 USD $43.1718
Inventory: 3003
Minimum: 1
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Technical Details
Technical
ECCN Code EAR99
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Additional Feature AVALANCHE RATED
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 300W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 300W
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 480m Ω @ 7.5A, 10V
Vgs(th) (Max) @ Id 4.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 4080pF @ 25V
Current - Continuous Drain (Id) @ 25°C 15A Tc
Gate Charge (Qg) (Max) @ Vgs 123nC @ 10V
Drain to Source Voltage (Vdss) 500V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Continuous Drain Current (ID) 15A
Threshold Voltage 2.5V
JEDEC-95 Code TO-220AB
Drain-source On Resistance-Max 0.48Ohm
DS Breakdown Voltage-Min 500V
Avalanche Energy Rating (Eas) 750 mJ
Nominal Vgs 2.5 V
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2009
Series Linear L2?
JESD-609 Code e1
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Compliance
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Supply Chain
Factory Lead Time 24 Weeks
Physical
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Transistor Element Material SILICON
Alternative Model
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