IXTP08N50D2
RoHS 
RoHS compliant
RoHS compliantPackage TO-220-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 500V 800MA TO220AB
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Buying Options
Total Price: USD $2.53
Unit Price: USD $2.5256
≥1 USD $2.5256
≥10 USD $2.032272
≥100 USD $1.672176
≥500 USD $1.414899
≥1000 USD $1.200522
≥3000 USD $1.140498
Inventory: 323
Minimum: 1
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Technical Details
Compliance
Lead Free Lead Free
RoHS Status ROHS3 Compliant
Technical
FET Feature Depletion Mode
Drain to Source Breakdown Voltage 500V
Gate to Source Voltage (Vgs) 20V
JEDEC-95 Code TO-220AB
Continuous Drain Current (ID) 800mA
Vgs (Max) ±20V
Gate Charge (Qg) (Max) @ Vgs 12.7nC @ 5V
Current - Continuous Drain (Id) @ 25°C 800mA Tc
Input Capacitance (Ciss) (Max) @ Vds 312pF @ 25V
Rds On (Max) @ Id, Vgs 4.6 Ω @ 400mA, 0V
Transistor Application AMPLIFIER
FET Type N-Channel
Case Connection DRAIN
Power Dissipation 60W
Element Configuration Single
Power Dissipation-Max 60W Tc
Number of Elements 1
Qualification Status Not Qualified
Pin Count 3
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Reach Compliance Code unknown
Peak Reflow Temperature (Cel) NOT SPECIFIED
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Active
Pbfree Code yes
Published 2009
Packaging Tube
Operating Temperature -55°C~150°C TJ
Physical
Transistor Element Material SILICON
Number of Pins 3
Package / Case TO-220-3
Mounting Type Through Hole
Mount Through Hole
Supply Chain
Factory Lead Time 24 Weeks
Alternative Model
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