IXTP08N100D2
RoHS 
RoHS compliant
RoHS compliantPackage TO-220-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH MOSFETS 1000V 800MA
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Buying Options
Total Price: USD $1.39
Unit Price: USD $1.3927
≥1 USD $1.3927
≥10 USD $1.14285
≥100 USD $1.1077
≥500 USD $1.0716
≥1000 USD $1.03645
Inventory: 26
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 24 Weeks
Physical
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2009
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code unknown
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
Qualification Status Not Qualified
Number of Elements 1
Power Dissipation-Max 60W Tc
Element Configuration Single
Power Dissipation 60W
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 21 Ω @ 400mA, 0V
Input Capacitance (Ciss) (Max) @ Vds 325pF @ 25V
Current - Continuous Drain (Id) @ 25°C 800mA Tc
Gate Charge (Qg) (Max) @ Vgs 14.6nC @ 5V
Drain to Source Voltage (Vdss) 1000V
Vgs (Max) ±20V
Continuous Drain Current (ID) 800mA
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 1kV
FET Feature Depletion Mode
Compliance
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Alternative Model
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