IXTP02N50D
RoHS 
RoHS compliant
RoHS compliantPackage TO-220-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 500V 0.2A TO-220
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Buying Options
Total Price: USD $5.86
Unit Price: USD $5.8608
≥1 USD $5.8608
≥10 USD $4.91744
≥100 USD $3.978128
≥500 USD $3.536139
≥1000 USD $3.027825
≥3000 USD $2.851015
Inventory: 120
Minimum: 1
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Technical Details
Compliance
Lead Free Lead Free
RoHS Status ROHS3 Compliant
Technical
FET Feature Depletion Mode
Pulsed Drain Current-Max (IDM) 0.8A
Drain to Source Breakdown Voltage 500V
Drain Current-Max (Abs) (ID) 0.2A
Gate to Source Voltage (Vgs) 20V
JEDEC-95 Code TO-220AD
Continuous Drain Current (ID) 200mA
Turn-Off Delay Time 28 ns
Vgs (Max) ±20V
Drive Voltage (Max Rds On,Min Rds On) 10V
Current - Continuous Drain (Id) @ 25°C 200mA Tc
Input Capacitance (Ciss) (Max) @ Vds 120pF @ 25V
Vgs(th) (Max) @ Id 5V @ 25μA
Rds On (Max) @ Id, Vgs 30 Ω @ 50mA, 0V
Transistor Application SWITCHING
FET Type N-Channel
Case Connection DRAIN
Power Dissipation 25W
Element Configuration Single
Power Dissipation-Max 1.1W Ta 25W Tc
Number of Elements 1
Qualification Status Not Qualified
JESD-30 Code R-PSFM-T3
Pin Count 3
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Technology MOSFET (Metal Oxide)
HTS Code 8541.29.00.95
Terminal Finish Matte Tin (Sn)
ECCN Code EAR99
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Active
Pbfree Code yes
JESD-609 Code e3
Published 2006
Packaging Tube
Operating Temperature -55°C~150°C TJ
Physical
Transistor Element Material SILICON
Package / Case TO-220-3
Mounting Type Through Hole
Mount Through Hole
Supply Chain
Factory Lead Time 24 Weeks
Alternative Model
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