DS Breakdown Voltage-Min 200V
Pulsed Drain Current-Max (IDM) 340A
Drain-source On Resistance-Max 0.025Ohm
Continuous Drain Current (ID) 79A
Drain to Source Voltage (Vdss) 200V
Current - Continuous Drain (Id) @ 25°C 85A Tc
Vgs(th) (Max) @ Id 4V @ 20mA
Transistor Application SWITCHING
Operating Mode ENHANCEMENT MODE
Power Dissipation-Max 400W Tc
Configuration SINGLE WITH BUILT-IN DIODE
Operating Temperature (Max) 150°C
Qualification Status Not Qualified
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Terminal Form UNSPECIFIED
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Terminal Finish Nickel (Ni)
Moisture Sensitivity Level (MSL) 1 (Unlimited)