Avalanche Energy Rating (Eas) 3000 mJ
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 600A
Turn-Off Delay Time 90 ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Gate Charge (Qg) (Max) @ Vgs 590nC @ 10V
Current - Continuous Drain (Id) @ 25°C 600A Tc
Input Capacitance (Ciss) (Max) @ Vds 40000pF @ 25V
Vgs(th) (Max) @ Id 3.5V @ 250μA
Rds On (Max) @ Id, Vgs 1.05m Ω @ 100A, 10V
Transistor Application SWITCHING
Operating Mode ENHANCEMENT MODE
Nominal Supply Current 200A
Power Dissipation-Max 940W Tc
Configuration SINGLE WITH BUILT-IN DIODE
Terminal Form UNSPECIFIED
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Additional Feature UL RECOGNIZED, AVALANCHE RATED
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Series GigaMOS?, TrenchT2?
Operating Temperature -55°C~175°C TJ