Operating Temperature -55°C~150°C TJ
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Form UNSPECIFIED
Reach Compliance Code unknown
Qualification Status Not Qualified
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 520W Tc
Operating Mode ENHANCEMENT MODE
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 550m Ω @ 500mA, 10V
Vgs(th) (Max) @ Id 4.5V @ 500μA
Input Capacitance (Ciss) (Max) @ Vds 8400pF @ 25V
Current - Continuous Drain (Id) @ 25°C 21A Tc
Gate Charge (Qg) (Max) @ Vgs 250nC @ 10V
Drain to Source Voltage (Vdss) 1000V
Drive Voltage (Max Rds On,Min Rds On) 10V
Turn-Off Delay Time 100 ns
Continuous Drain Current (ID) 21A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 1kV
Pulsed Drain Current-Max (IDM) 84A